AGNIT Semiconductors, in collaboration with the Indian Institute of Science (IISc), is orchestrating a technological breakthrough by delving into the world of Gallium Nitride (GaN) components. This semiconductor compound has proven to be more efficient than traditional silicon in powering various electronic devices, ranging from smartphones and laptops to electric vehicles. GaN operates at a higher frequency, minimizing energy wastage and enabling the development of fast chargers with significantly higher power outputs in compact designs.
AGNIT Semiconductors, positioned as India's premier private sector player in semiconductor manufacturing, aims to carve out a niche in the GaN component market. GaN's impact extends beyond consumer electronics, finding applications in white light-emitting LEDs and radio frequency (RF) electronics, crucial for wireless communication, including 5G connectivity and radar systems.
Professor Srinivasan Raghavan, Chairman of the Centre for Nano Science and Engineering (CeNSE) at IISc, emphasizes the pivotal role GaN will play in wireless communication and energy consumption. CeNSE, hosting India's largest academic fabrication facility, has been at the forefront of GaN research since 2005, progressing from material manufacturing to device integration and testing.
The journey began in 2009 with the sanctioning of the first GaN project, leading to the establishment of a Metalorganic Chemical Vapor Deposition (MOCVD) reactor. This advanced process deposits thin GaN layers on silicon wafers, facilitating the intricate fabrication of electronic devices. AGNIT Semiconductors emerged in 2019, founded by a group of IISc faculty members and students from different departments.
The global market for GaN components is projected to reach $3 billion by 2026, presenting a lucrative opportunity for AGNIT. Hareesh Chandrasekar, CEO and Co-founder of AGNIT, highlights the strong RF design ecosystem in India, emphasizing the need for a fabrication facility. Backed by IISc's Foundation for Science Innovation and Development and an angel investor, AGNIT is poised to fill this gap by manufacturing components for 5G telecommunications and wireless transmitters.
IISc's focus extends beyond AGNIT's commercial endeavors; it aims to foster a GaN ecosystem in India, aligning with the semiconductor mission announced in December 2021. Muralidharan Rangarajan, Emeritus Professor at IISc, clarifies that GaN is not a wholesale replacement for silicon but a complementary technology. The emphasis lies on replacing key components, such as switches in power electronics, with gallium nitride.
Looking ahead, FSID-IISc anticipates the commissioning of a low-volume production fab for GaN at the IISc campus. While semiconductor ventures require patience, AGNIT's strategic entry aligns with the burgeoning market demands for EV chargers and 5G telecom applications, positioning the startup at the forefront of innovation.