STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, and Innoscience - the world leader in 8” GaN-on-Si (gallium nitride on silicon) high-performance low-cost manufacturing, announce the signature of an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power solutions and supply chain resilience.
The two companies shared their reaction to the agreement, "With this memorandum of understanding, we are excited to partner in helping to meet growing market demand for GaN power solutions in a flexible manner."
GaN power devices utilize fundamental material properties that enable new standards of system performance in power conversion, motion control, and actuation, providing substantially lower losses that improve efficiency, smaller size and lighter weights to reduce overall solution cost and carbon footprint; these devices are accelerating in adoption for consumer electronics, industrial and datacenter power supplies, solar inverters, and are being designed into the next generation EV powertrains because of the significant size and weight reductions.
Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors of STMicroelectronics declared: “ST and Innoscience are both Integrated Device Manufacturers, and with this agreement we will leverage this model to the benefit of our customers globally. First, ST will be accelerating its roadmap in GaN power technology to complement its silicon and silicon carbide offering. Second, ST will be able to leverage a flexible manufacturing model to serve customers globally.”
Dr. Weiwei Luo, Chairman and Founder of Innoscience, stated “GaN technology is essential to improve electronics, creating smaller and more efficient systems which save electric power, lower cost, and reduce CO2 Emissions. Innoscience pioneered mass production of 8-inch GaN technology and has shipped over 1 billion GaN devices into multiple markets, and we are very excited to move into strategic collaboration with ST. The joint collaboration between ST and Innoscience will further expand and accelerate the adoption of GaN technology. Together the teams at Innoscience and ST will develop the next generations of GaN technology”.